丝印：NTP055N65S3H；Package：TO-220-3LD；MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 55 m, 47 A

文件：319.83 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：NTP055N65S3H；Package：TO-220-3LD；MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 55 m, 47 A

文件：319.83 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 47A@ TC=25℃ · Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 55mΩ(Max)@VGS= 10V APPLICATIONS · UPS / Solar · EV Charger · Industrial Power Supplies

文件：398.21 Kbytes 页数：2 Pages

ISC

无锡固电