NTHL040N120SC1规格书应用电路供应代理-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NTHL040N120SC1	文件：242.9 Kbytes Page：7 Pages	丝印：NTHL040N120SC1；Package：TO-247；MOSFET - SiC Power, Single N-Channel 1200 V, 40 m, 60 A 文件：242.9 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NTHL040N120SC1	文件：312.59 Kbytes Page：7 Pages	Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-3L Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (typ. Coss = 140 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • 文件：312.59 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NTHL040N120SC1	文件：313.53 Kbytes Page：7 Pages	Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-3L Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (typ. Coss = 140 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • 文件：313.53 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NTHL040N120SC1	文件：300 bytes Page：1 Pages	Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster op • Max RDS(on) = xxmΩ at Vgs = 20V, Id = 20A\n• Typical RDS(on) = 40mΩ\n• High Speed Switching and Low Capacitance\n• 100% UIL Tested;	ONSEMI 安森美半导体	ONSEMI
NTHL040N120SC1_V01	文件：312.59 Kbytes Page：7 Pages	Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-3L Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (typ. Coss = 140 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • 文件：312.59 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NTHL040N120SC1_V02	文件：313.53 Kbytes Page：7 Pages	Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-3L Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (typ. Coss = 140 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • 文件：313.53 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI

技术参数

Pb-free：
Pb
Halide free：
H
Status：
Active
Channel Polarity：
N-Channel
Configuration：
Single
V(BR)DSS Min (V)：
1200
VGS Max (V)：
20
VGS(th) Max (V)：
4.3
ID Max (A)：
60
PD Max (W)：
348
Ciss Typ (pF)：
1781
Package Type：
TO-247-3LD

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	NTHL040N120SC1	onsemi(安森美)	24+	TO-247	8110	支持大陆交货,美金交易。原装现货库存。	询价
深圳市芯球通科技有限公司	NTHL040N120SC1	ON(安森美)	23+		11755	公司只做原装正品,假一赔十	询价
深圳市盈慧通电子有限公司	NTHL040N120SC1	ON(安森美)	2511		8570	电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价	询价
深圳市达恩科技有限公司	NTHL040N120SC1	ON	24+	NA	3000	进口原装假一罚十现货	询价
深圳市恒科翔业电子有限公司	NTHL040N120SC1	ON/安森美	22+		24000	原装正品现货,实单可谈,量大价优	询价
深圳市亿联芯电子科技有限公司	NTHL040N120SC1	onsemi	23+	TO-247-3LD	1356	原厂正品现货SiC MOSFET全系列	询价
深圳市中联芯电子有限公司	NTHL040N120SC1	ONSEMI	23+	MOSFET	5864	原装原标原盒给价就出全网最低	询价
现代芯城（深圳）科技有限公司	NTHL040N120SC1		24+	N/A	82000	一级代理-主营优势-实惠价格-不悔选择	询价
北京天阳诚业科贸有限公司	NTHL040N120SC1	ON SEMICONDUCTOR	24+	con	35960	查现货到京北通宇商城	询价
深圳市亚泰盈科电子有限公司	NTHL040N120SC1	onsemi(安森美)	2025+	TO-247-3	55740		询价

更多NTHL040N120SC1供应商更新时间2025-10-4 16:12:00

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