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NTHL040N120SC1中文资料Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L数据手册ONSEMI规格书
NTHL040N120SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• Max RDS(on) = xxmΩ at Vgs = 20V, Id = 20A
• Typical RDS(on) = 40mΩ
• High Speed Switching and Low Capacitance
• 100% UIL Tested
应用 Application
• PFC
• Boost Inverter
• PV Charging
• Solar Inverter
• Network Power Supply
• Charging Stations
技术参数
- 制造商编号
：NTHL040N120SC1
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- Halide free
：H
- Status
：Active
- Channel Polarity
：N-Channel
- Configuration
：Single
- V(BR)DSS Min (V)
：1200
- VGS Max (V)
：20
- VGS(th) Max (V)
：4.3
- ID Max (A)
：60
- PD Max (W)
：348
- Ciss Typ (pF)
：1781
- Package Type
：TO-247-3LD
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ON/安森美 |
22+ |
TO-247 |
9000 |
原装正品,支持实单! |
询价 | ||
ON(安森美) |
24+ |
标准封装 |
8000 |
原装，正品 |
询价 | ||
onsemi(安森美) |
24+ |
TO-247 |
8110 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ONSEMI |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
ONSEMI |
24+ |
TO-247 |
5000 |
全新原装正品,现货销售 |
询价 | ||
ONSEMI |
23+ |
TO-247 |
141 |
正规渠道,只有原装! |
询价 | ||
ON |
25+ |
TO-247 |
1800 |
原厂原装,价格优势 |
询价 | ||
ONSEMI |
23+ |
TO-247 |
20000 |
询价 | |||
onsemi |
23+ |
TO-247-3LD |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 |
