NTHL019N60S5F数据手册ONSEMI中文资料规格书

描述 Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the
various power systems for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.

特性 Features

• Ultra Low Gate Charge (Typ. Qg = 252 nC)
• Lower switching loss
• Low Time Related Output Capacitance (Typ. Coss(tr.) = 3174 pF)
• Lower switching loss
• Optimized Capacitance
• Lower peak Vds and lower Vgs oscillation
• Excellent body diode performance (low Qrr, robust body diode)
• Higher system reliability in LLC and Phase shift full bridge circuit
• 650 V @ TJ = 150 °C
• Typ. RDS(on) = 15.2 mΩ
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
• Internal Gate Resistance: 3.5 Ω

应用 Application

• Telecommunication
• Cloud system
• Industrial
• Telecom power
• Server power
• EV charger
• Solar / UPS