NTH4LN019N65S3H中文资料Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 75 A, 19.3 mΩ, TO-247 narrow 4lead数据手册ONSEMI规格书

描述 Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series helps minimize various power systems and improve system efficiency.

特性 Features

• 700 V @ TJ = 150 oC
• Higher system reliability at low temperature operation
• Low Effective Output Capacitance (Typ. Coss(eff.) = 2495 pF)
• Low switching loss
• Ultra Low Gate Charge (Typ. Qg = 282 nC)
• Low switching loss
• Fast switching performance with robust body diode
• Low switching loss and higher system reliability
• Kelvin Source configuration
• Lower switching loss and lower Vgs oscillation
• 100% Avalanche Tested
• RoHS Compliant
• Typ. RDS(on) = 15 mΩ
• Internal Gate Resistance: 1.1 Ω

应用 Application

• Telecommunication
• Cloud system
• Industrial
• Telecom power
• Server power
• EV charger
• Solar / UPS