首页>NTHL020N090SC1>规格书详情
NTHL020N090SC1中文资料Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 900 V, M2, TO-247-3L数据手册ONSEMI规格书
NTHL020N090SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• Ultra Low Gate Charge
• 196nC
• High Junction Temperature
• 175°C
• 900V Rating
• 100% UIL Tested
• RoHS Compliant
应用 Application
• UPS
• DC-DC Converter
• Boost Inverter
• Solar
• Power Devices
技术参数
- 制造商编号
：NTHL020N090SC1
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- Halide free
：H
- Status
：Active
- Channel Polarity
：N-Channel
- Configuration
：Single
- V(BR)DSS Min (V)
：900
- VGS Max (V)
：19
- VGS(th) Max (V)
：4.3
- ID Max (A)
：118
- PD Max (W)
：503
- RDS(on) Max @ VGS = 2.5 V(mΩ)
：NA
- RDS(on) Max @ VGS = 4.5 V(mΩ)
：NA
- RDS(on) Max @ VGS = 10 V(mΩ)
：NA
- Qg Typ @ VGS = 4.5 V (nC)
：NA
- Qg Typ @ VGS = 10 V (nC)
：NA
- Ciss Typ (pF)
：4415
- Package Type
：TO-247-3LD
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
23+ |
TO-247 |
12881 |
公司只做原装正品,假一赔十 |
询价 | ||
ON/安森美 |
24+ |
TO-247 |
9000 |
原装现货 实单必成 |
询价 | ||
ON |
2022+ |
TO-247-3LD |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
onsemi |
两年内 |
NA |
450 |
实单价格可谈 |
询价 | ||
ONSEMI |
22+ |
SMD |
9450 |
询价 | |||
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
onsemi |
23+ |
TO-247-3 |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
onsemi(安森美) |
24+ |
TO-247 |
7814 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON SEMICONDUCTOR |
23+ |
NTHL025N065SC1 |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
ON |
24+ |
N/A |
39500 |
进口原装现货 支持实单价优 |
询价 |
