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NTHL025N065SC1中文资料Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L数据手册ONSEMI规格书
NTHL025N065SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• Tj = 175°C
• High reliability at high temperature ambient
• Ultra Low Gate Charge (Typ. Qg = 164 nC)
• Low switching loss
• High Speed Switching with Low Capacitance (Coss = 278 pF)
• Low switching loss
• Zero reverse recovery current of body diode
• Higher system reliability in LLC and Phase shift full bridge circuit
• Max RDS(on) = 19 mΩ at Vgs = 18V
• 100% UIL Tested
• RoHS Compliant
应用 Application
• Telecommunication
• Cloud system
• Industrial
• Telecom power
• Server power
• EV charger
• Solar / UPS
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
23+ |
TO-247-3 |
13252 |
公司只做原装正品,假一赔十 |
询价 | ||
ON/安森美 |
22+ |
TO-247 |
9000 |
原装正品,支持实单! |
询价 | ||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
ON |
2022+ |
TO-247-3LD |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ONSEMI |
23+ |
TO-247 |
20000 |
询价 | |||
ON(安森美) |
2021/2022+ |
标准封装 |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
ON SEMI/安森美半导体 |
23+ |
TO-247-3 |
5000 |
公司只做原装,可配单 |
询价 | ||
ONSEMI |
22+ |
SMD |
9450 |
询价 | |||
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
onsemi |
23+ |
TO-247-3LD |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 |
