丝印：HL025N065SC1；Package：TO247-3L；Silicon Carbide (SiC) MOSFET – 19 mohm,650V, M2, TO-247-3L

Features • Typ. RDS(on) = 19 m @ VGS = 18 V Typ. RDS(on) = 25 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 164 nC) • Low Capacitance (Coss = 278 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level in

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Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie • Tj = 175°C\n• High reliability at high temperature ambient\n• Ultra Low Gate Charge (Typ. Qg = 164 nC)\n• Low switching loss\n• High Speed Switching with Low Capacitance (Coss = 278 pF)\n• Low switching loss\n• Zero reverse recovery current of body diode\n• Higher system reliability in LLC and Pha;

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Silicon Carbide (SiC) MOSFET - 19 mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 19 m @ VGS = 18 V Typ. RDS(on) = 25 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 164 nC) • Low Output Capacitance (Coss = 278 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant Typical Applications • Automotive On Board Cha

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安森美半导体

Silicon Carbide (SiC) MOSFET - 19 mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 19 m @ VGS = 18 V Typ. RDS(on) = 25 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 164 nC) • Low Output Capacitance (Coss = 278 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies) • Solar Inv

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安森美半导体