丝印：HL025N065SC1；Package：TO247-3L；Silicon Carbide (SiC) MOSFET – 19 mohm,650V, M2, TO-247-3L

Features • Typ. RDS(on) = 19 m @ VGS = 18 V Typ. RDS(on) = 25 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 164 nC) • Low Capacitance (Coss = 278 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level in

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