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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
NESG210719	文件：114.56 Kbytes Page：3 Pages	NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES •IDEALFOROSC.,HIGH-GAINAMPLIFICATION APPLICATIONS •HIGHBREAKDOWNVOLTAGETECHNOLOGYFOR SiGeTRANSISTOR •3-PINSUPERMINIMOLD(19)PACKAGE	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NESG210719	文件：124.41 Kbytes Page：10 Pages	NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG)	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NESG210719	文件：1.1949 Mbytes Page：9 Pages	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)	CEL California Eastern Labs	CEL
NESG210719-A	文件：124.41 Kbytes Page：10 Pages	NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG)	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NESG210719-T1	文件：114.56 Kbytes Page：3 Pages	NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES •IDEALFOROSC.,HIGH-GAINAMPLIFICATION APPLICATIONS •HIGHBREAKDOWNVOLTAGETECHNOLOGYFOR SiGeTRANSISTOR •3-PINSUPERMINIMOLD(19)PACKAGE	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NESG210719-T1	文件：124.41 Kbytes Page：10 Pages	NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG)	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NESG210719-T1-A	文件：124.41 Kbytes Page：10 Pages	NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG)	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NESG210719-A	文件：1.1949 Mbytes Page：9 Pages	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)	CEL California Eastern Labs	CEL
NESG210719-T1	文件：1.1949 Mbytes Page：9 Pages	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)	CEL California Eastern Labs	CEL
NESG210719-T1-A	文件：1.1949 Mbytes Page：9 Pages	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)	CEL California Eastern Labs	CEL

详细参数

型号：
NESG210719
制造商：
NEC
制造商全称：
NEC
功能描述：
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳兆威电子有限公司	NESG210719	RENESAS	23+	SC-90	63000	原装正品现货	询价
深圳市威尔健半导体有限公司	NESG210719	NEC	23+	SOT-23	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	NESG210719	NEC	21+	SOT-23	10000	原装现货假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	NESG210719	RENESAS/瑞萨	23+	SOT-523	27000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市得捷芯城科技有限公司	NESG210719	NEC	24+	NA/	6250	原装现货,当天可交货,原型号开票	询价
深圳市宏兴瑞科技有限公司	NESG210719	NEC	24+	SOT-23	60000		询价
千层芯半导体(深圳)有限公司	NESG210719-A	CEL	24+	原厂原装	5000	原装正品	询价
深圳诚思涵科技有限公司	NESG210719-T1-A	CEL	19+	SOT-523	200000		询价
中天科工半导体（深圳）有限公司	NESG210719-T1-A	CEL	20+	SOT-523	36800	原装优势主营型号-可开原型号增税票	询价
深圳市宇创芯科技有限公司	NESG210719-T1-A	RENESAS/瑞萨	24+	SOT-523	9600	原装现货,优势供应,支持实单!	询价

更多NESG210719供应商更新时间2025-5-12 13:00:00

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