NESG210833技术资料参数批发供应瑞萨NEC-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NESG210833	文件：103.15 Kbytes Page：8 Pages	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GH 文件：103.15 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
NESG210833	文件：232.19 Kbytes Page：10 Pages	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GH 文件：232.19 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
NESG210833	文件：300 bytes Page：1 Pages	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)	Renesas 瑞萨	Renesas
NESG210833-A	文件：103.15 Kbytes Page：8 Pages	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GH 文件：103.15 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
NESG210833-T1B	文件：232.19 Kbytes Page：10 Pages	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GH 文件：232.19 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
NESG210833-T1B	文件：103.15 Kbytes Page：8 Pages	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GH 文件：103.15 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
NESG210833-T1B-A	文件：103.15 Kbytes Page：8 Pages	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GH 文件：103.15 Kbytes 页数：8 Pages	NEC 瑞萨	NEC

详细参数

型号：
NESG210833
制造商：
NEC
制造商全称：
NEC
功能描述：
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD(33 PKG)

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市益百分电子有限公司	NESG210833-T1B-A	NEC	10PB	SOT23/SOT323	1200	全新原装进口自己库存优势	询价
上海专毅电子科技有限公司	NESG210833-T1B-A	NEC	17+	SOT23/SOT323	9988	只做原装进口,自己库存	询价
艾睿（深圳）半导体有限公司	NESG210833-T1B-A	RENESAS/瑞萨	2447	SOT23	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市凌旭科技有限公司	NESG210833-T1B-A	RENESAS/瑞萨	21+	SOT23	6000		询价
深圳市宇创芯科技有限公司	NESG210833-T1B-A	RENESAS/瑞萨	24+	SOT23	9600	原装现货,优势供应,支持实单!	询价
深圳市威尔健半导体有限公司	NESG210833-T1B-A	RENESAS/瑞萨	23+	SOT-23	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	NESG210833-T1B-A	RENESAS/瑞萨	21+	SOT23	10000	原装现货假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	NESG210833-T1B	RENESAS/瑞萨	23+	SOT-23	27000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市胜彬电子有限公司	NESG210833-T1B	RENESAS/瑞萨	22+	SC-59	3000	原装正品,支持实单	询价
深圳市美思瑞电子科技有限公司	NESG210833-T1B-A	RENESAS/瑞萨	22+	SOT23	6000	现货,原厂原装假一罚十!	询价

更多NESG210833供应商更新时间2025-10-10 17:49:00

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