NESG7030M04技术资料参数供应价格瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NESG7030M04	文件：154.71 Kbytes Page：11 Pages	NPN Silicon Germanium Carbon RF Transistor FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz • Maximum stable power gain: MSG 文件：154.71 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NESG7030M04	文件：300 bytes Page：1 Pages	NPN Silicon Germanium Carbon RF Transistor	Renesas 瑞萨	Renesas
NESG7030M04-A	文件：154.71 Kbytes Page：11 Pages	NPN Silicon Germanium Carbon RF Transistor FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz • Maximum stable power gain: MSG 文件：154.71 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NESG7030M04-T2	文件：154.71 Kbytes Page：11 Pages	NPN Silicon Germanium Carbon RF Transistor FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz • Maximum stable power gain: MSG 文件：154.71 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NESG7030M04-T2-A	文件：154.71 Kbytes Page：11 Pages	NPN Silicon Germanium Carbon RF Transistor FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz • Maximum stable power gain: MSG 文件：154.71 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NESG7030M04-T2B	文件：154.71 Kbytes Page：11 Pages	NPN Silicon Germanium Carbon RF Transistor FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz • Maximum stable power gain: MSG 文件：154.71 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NESG7030M04-T2B-A	文件：154.71 Kbytes Page：11 Pages	NPN Silicon Germanium Carbon RF Transistor FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz • Maximum stable power gain: MSG 文件：154.71 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NESG7030M04-A	文件：100 bytes Page：1 Pages	Package：SOT-343F；包装：托盘类别：分立半导体产品晶体管 - 双极（BJT）- 射频描述：RF TRANS NPN 4.3V 5.8GHZ M04	CEL	CEL

详细参数

型号：
NESG7030M04
制造商：
RENESAS
制造商全称：
Renesas Technology Corp
功能描述：
NPN Silicon Germanium Carbon RF Transistor

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市正迈科技有限公司	NESG7030M04-T2-A	RENESAS丨全系列供应	23+	RENESAS丨全系列供应	2985	原厂授权代理分销现货只做原装正迈科技样品支持现货	询价
深圳市鹏顺微电子科技有限公司	NESG7030M04-A	CEL	2022+	M04	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市宏捷佳电子科技有限公司	NESG7030M04-A	CEL	25+	SOT-343F	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市赛美科科技有限公司	NESL064AT	NICHIA		SMD-2	35560	一级代理原装正品假一罚十价格优势长期供货	询价
惠州市良思优电子科技有限公司	NESL064AT	Nichia	18+		25360	正规渠道货源	询价
深圳市威尔健半导体有限公司	NESL157AT	NICHIA	23+	3014(0.52)	50000	全新原装正品现货,支持订货	询价
深圳市威雅利发展有限公司	NESL157AT	NICHIA	10+	3014(0.52)	2500	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市得捷芯城科技有限公司	NESL157AT	NHIA	24+	NA/	5750	原装现货,当天可交货,原型号开票	询价
深圳深宇韬电子科技有限公司	NESL157AT	NICHIA	2023+	3014(0.52)	8800	正品渠道现货终端可提供BOM表配单。	询价
深圳市博中泰实业有限公司	NESL157AT	NICHIA	24+	3014(0.52)	60000		询价

更多NESG7030M04供应商更新时间2025-10-7 9:12:00

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