NPN Silicon Germanium Carbon RF Transistor

FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz • Maximum stable power gain: MSG

文件：154.71 Kbytes 页数：11 Pages

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NPN Silicon Germanium Carbon RF Transistor

FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz • Maximum stable power gain: MSG

文件：154.71 Kbytes 页数：11 Pages

RENESAS

瑞萨

NPN Silicon Germanium Carbon RF Transistor

FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz • Maximum stable power gain: MSG

文件：154.71 Kbytes 页数：11 Pages

RENESAS

瑞萨

NPN Silicon Germanium Carbon RF Transistor

FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz • Maximum stable power gain: MSG

文件：154.71 Kbytes 页数：11 Pages

RENESAS

瑞萨