NESG3032M14-T3-A规格书库存现货瑞萨-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NESG3032M14-T3-A	文件：168.45 Kbytes Page：15 Pages	NPN SiGe RF Transistor for Low Noise, High-Gain NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG) FEATURES • The NESG3032M14 is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ 文件：168.45 Kbytes 页数：15 Pages	RENESAS 瑞萨	RENESAS
NESG3032M14-T3-A	文件：267.53 Kbytes Page：6 Pages	NPN SILICON GERMANIUM RF TRANSISTOR 文件：267.53 Kbytes 页数：6 Pages	CEL	CEL
NESG3032M14-T3	文件：168.45 Kbytes Page：15 Pages	NPN SiGe RF Transistor for Low Noise, High-Gain NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG) FEATURES • The NESG3032M14 is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ 文件：168.45 Kbytes 页数：15 Pages	RENESAS 瑞萨	RENESAS
NESG3032M14-T3	文件：267.53 Kbytes Page：6 Pages	NPN SILICON GERMANIUM RF TRANSISTOR 文件：267.53 Kbytes 页数：6 Pages	CEL	CEL

更多NESG3032M14-T3-A供应商更新时间2025-10-4 10:45:00