首页 >NESG3032M14-T3-A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NESG3032M14-T3-A | NPN SiGe RF Transistor for Low Noise, High-Gain NPNSiGeRFTransistorforLowNoise,High-Gain Amplification4-PinLead-LessMinimold(M14,1208PKG) FEATURES •TheNESG3032M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@ | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | |
NESG3032M14-T3-A | NPN SILICON GERMANIUM RF TRANSISTOR | CEL California Eastern Labs | CEL | |
NPNSiGeRFTransistorforLowNoise,High-Gain NPNSiGeRFTransistorforLowNoise,High-Gain Amplification4-PinLead-LessMinimold(M14,1208PKG) FEATURES •TheNESG3032M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@ | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPNSILICONGERMANIUMRFTRANSISTOR | CEL California Eastern Labs | CEL |
详细参数
- 型号：
NESG3032M14-T3-A
- 功能描述：
射频硅锗晶体管 NPN Silicn Germanium Amp/Oscilltr
- RoHS：
否
- 制造商：
Infineon Technologies 发射极 - 基极电压
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
询价 | ||
RENESAS/瑞萨 |
2022+ |
10000 |
全新原装 货期两周 |
询价 | |||
CEL |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
NEC |
23+ |
M14 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC/RENESAS |
21+ |
SOT523-4 |
10000 |
原装现货假一罚十 |
询价 | ||
NEC |
09+ |
M14 |
25500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
NEC |
SOT23-4 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
RENESAS |
23+ |
SOT-343 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
RENESAS/瑞萨 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
NEC |
24+ |
NA/ |
25500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 |
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