NESG260234-T1数据手册供应商报价瑞萨-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NESG260234-T1	文件：326.88 Kbytes Page：14 Pages	NPN SILICON GERMANIUM RF TRANSISTOR FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz • MSG (Maximum Stable Gain) = 23 dB TYP. @ VCE = 6 V, Ic = 100 mA, f = 460 MHz • Using UHS2-HV pr 文件：326.88 Kbytes 页数：14 Pages	RENESAS 瑞萨	RENESAS
NESG260234-T1	文件：252.15 Kbytes Page：4 Pages	3-PIN POWER MINIMOLD 文件：252.15 Kbytes 页数：4 Pages	NEC 瑞萨	NEC
NESG260234-T1	文件：362.92 Kbytes Page：11 Pages	NPN SILICON GERMANIUM RF TRANSISTOR 文件：362.92 Kbytes 页数：11 Pages	CEL	CEL
NESG260234-T1-AZ	文件：326.88 Kbytes Page：14 Pages	NPN SILICON GERMANIUM RF TRANSISTOR FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz • MSG (Maximum Stable Gain) = 23 dB TYP. @ VCE = 6 V, Ic = 100 mA, f = 460 MHz • Using UHS2-HV pr 文件：326.88 Kbytes 页数：14 Pages	RENESAS 瑞萨	RENESAS
NESG260234-T1-AZ	文件：100 bytes Page：1 Pages	Package：TO-243AA；包装：托盘类别：分立半导体产品晶体管 - 双极（BJT）- 射频描述：TRANS NPN 460MHZ SOT-89	CEL	CEL

更多NESG260234-T1供应商更新时间2025-10-15 16:27:00