NESG210833中文资料瑞萨数据手册PDF规格书-114ic电子网

NESG210833中文资料瑞萨数据手册PDF规格书

厂商型号	NESG210833
功能描述	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
文件大小	103.15 Kbytes
页面数量	8 页
生产厂商	Renesas Electronics America
企业简称	NEC【瑞萨】
中文名称	日本瑞萨电子株式会社官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2024-9-25 19:09:00

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

FEATURES

• The device is an ideal choice for low noise, low distortion amplification.

NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz

NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz

• PO (1 dB) = 18.5 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz

• OIP3 = 31 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz

• Maximum stable power gain: MSG =16.0 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz

• SiGe HBT technology (UHS2) : fT = 15.5 GHz

• 3-pin minimold (33 PKG)

型号：
NESG210833
制造商：
NEC
制造商全称：
NEC
功能描述：
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD(33 PKG)