NESG3031M05-A资料datasheet下载市场行情-114ic电子网

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NESG3031M05-A	文件：317.71 Kbytes Page：12 Pages	NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NESG3031M05	文件：100.82 Kbytes Page：3 Pages	NECsNPNSiGeHIGHFREQUENCYTRANSISTOR FEATURES •LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz •MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz •SiGeHBTTECHNOLOGY:	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NESG3031M05	文件：334.1 Kbytes Page：9 Pages	NPNSILICONGERMANIUMRFTRANSISTOR	CEL California Eastern Laboratories	CEL
NESG3031M05	文件：317.71 Kbytes Page：12 Pages	NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

更多NESG3031M05-A供应商更新时间2024-4-30 15:30:00