首页 >NESG3033M14>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NESG3033M14 | NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz • SiGe HBT technology (UHS3) adopted: fmax = 110 GHz • This product 文件：176.65 Kbytes 页数：16 Pages | RENESAS 瑞萨 | RENESAS | |
NESG3033M14 | NPN SILICON GERMANIUM RF TRANSISTOR 文件：281.49 Kbytes 页数：7 Pages | CEL | CEL | |
NESG3033M14 | NPN SILICON GERMANIUM RF TRANSISTOR | CEL | CEL | |
NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz • SiGe HBT technology (UHS3) adopted: fmax = 110 GHz • This product 文件：176.65 Kbytes 页数：16 Pages | RENESAS 瑞萨 | RENESAS | ||
NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz • SiGe HBT technology (UHS3) adopted: fmax = 110 GHz • This product 文件：176.65 Kbytes 页数：16 Pages | RENESAS 瑞萨 | RENESAS | ||
NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz • SiGe HBT technology (UHS3) adopted: fmax = 110 GHz • This product 文件：176.65 Kbytes 页数：16 Pages | RENESAS 瑞萨 | RENESAS | ||
NPN SILICON GERMANIUM RF TRANSISTOR 文件：281.49 Kbytes 页数：7 Pages | CEL | CEL | ||
NPN SILICON GERMANIUM RF TRANSISTOR 文件：281.49 Kbytes 页数：7 Pages | CEL | CEL | ||
NPN SILICON GERMANIUM RF TRANSISTOR 文件：281.49 Kbytes 页数：7 Pages | CEL | CEL |
详细参数
- 型号：
NESG3033M14
- 制造商：
CEL
- 制造商全称：
CEL
- 功能描述：
NPN SILICON GERMANIUM RF TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
SOT-143 |
8600 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
NEC |
25+ |
SOT143 |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
NEC |
2023+ |
SOT143 |
50000 |
原装现货 |
询价 | ||
NEC(日电电子) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
RENESAS/瑞萨 |
24+ |
65200 |
询价 | ||||
NEC |
1206+ |
SOT-163 |
32000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
NEC |
2023+ |
SOT-163 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
NEC |
23+ |
SOT-163 |
32000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
24+ |
SOT-163 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
NEC |
22+ |
SOT-163 |
20000 |
公司只做原装 品质保障 |
询价 |
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相关库存
更多- NESG3033M14-T3
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- NESG505CT
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- NESW007T
- NESW017T
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- NESWC04T
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- NET+40-QILRO-4
- NET+40-QIPRO-4
- NET+40-QIVRO-4
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- NET1
- NET1080REV2
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- NET2270
- NET2270REV3B-LF
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- NET2272REV1A-BC F
- NET2272REV1A-LF
- NET2280EVB
- NET2280EVB-LF
- NET2280RDK
- NET2280REV1A-LF
- NET2282-AB33PC F
- NET2282RDK
- NET2-4350
- NET2890
- NET3
- NET-35_10
- NET-35A
- NET-35C
- NET3T
