NESG3033M14-T3数据手册市场行情瑞萨-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NESG3033M14-T3	文件：176.65 Kbytes Page：16 Pages	NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz • SiGe HBT technology (UHS3) adopted: fmax = 110 GHz • This product 文件：176.65 Kbytes 页数：16 Pages	RENESAS 瑞萨	RENESAS
NESG3033M14-T3	文件：281.49 Kbytes Page：7 Pages	NPN SILICON GERMANIUM RF TRANSISTOR 文件：281.49 Kbytes 页数：7 Pages	CEL	CEL
NESG3033M14-T3-A	文件：176.65 Kbytes Page：16 Pages	NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz • SiGe HBT technology (UHS3) adopted: fmax = 110 GHz • This product 文件：176.65 Kbytes 页数：16 Pages	RENESAS 瑞萨	RENESAS
NESG3033M14-T3-A	文件：281.49 Kbytes Page：7 Pages	NPN SILICON GERMANIUM RF TRANSISTOR 文件：281.49 Kbytes 页数：7 Pages	CEL	CEL

更多NESG3033M14-T3供应商更新时间2025-10-4 10:04:00