首页 >NESG3033M14-A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NESG3033M14-A | NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES •TheNESG3033M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@VCE=2V,IC=15mA,f=2.0GHz •SiGeHBTtechnology(UHS3)adopted:fmax=110GHz •Thisproduct | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | |
NESG3033M14-A | NPN SILICON GERMANIUM RF TRANSISTOR | CEL California Eastern Labs | CEL | |
NPNSiGeRFTransistorforLowNoise,High-Gain FEATURES •TheNESG3033M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@VCE=2V,IC=15mA,f=2.0GHz •SiGeHBTtechnology(UHS3)adopted:fmax=110GHz •Thisproduct | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPNSILICONGERMANIUMRFTRANSISTOR | CEL California Eastern Labs | CEL |
详细参数
- 型号：
NESG3033M14-A
- 功能描述：
射频硅锗晶体管 NPN Germanium Amp
- RoHS：
否
- 制造商：
Infineon Technologies 发射极 - 基极电压
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CEL |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
NEC |
24+ |
SOT-163 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
RENESAS/瑞萨 |
24+ |
65200 |
询价 | ||||
NEC |
23+ |
SOT-163 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
1206+ |
SOT-163 |
32000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
NEC |
2023+ |
SOT-163 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
RENESAS/瑞萨 |
23+ |
SOT-23 |
89630 |
当天发货全新原装现货 |
询价 | ||
RENESAS/瑞萨 |
22+ |
SOT-23 |
3000 |
原装正品,支持实单 |
询价 | ||
RENESAS |
2025+ |
SOT23 |
3365 |
全新原厂原装产品、公司现货销售 |
询价 | ||
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
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