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NESG3031M05

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG3031M05

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

FEATURES •LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz •MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz •SiGeHBTTECHNOLOGY:

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG3031M05

NPN SILICON GERMANIUM RF TRANSISTOR

CEL

California Eastern Laboratories

NESG3031M05-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG3031M05-T1

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

FEATURES •LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz •MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz •SiGeHBTTECHNOLOGY:

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG3031M05-T1

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG3031M05-T1-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG3031M05-T1

NPN SILICON GERMANIUM RF TRANSISTOR

CEL

California Eastern Laboratories

NESG3031M05-T1-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)

CEL

California Eastern Laboratories

NESG3031M05-EVNF16

包装:盒 类别:开发板,套件,编程器 射频评估和开发套件,开发板 描述:EVAL BOARD NESG3031M05 1.6GHZ

CEL

California Eastern Laboratories

NESG3031M05-EVNF58

包装:盒 类别:开发板,套件,编程器 射频评估和开发套件,开发板 描述:EVAL BOARD NESG3031M05 5.8GHZ

CEL

California Eastern Laboratories

NESG3031M05-EVNF58-A

包装:盒 类别:开发板,套件,编程器 射频评估和开发套件,开发板 描述:EVAL BOARD NESG3031M05

CEL

California Eastern Laboratories

详细参数

  • 型号:

    NESG3031M05

  • 功能描述:

    射频硅锗晶体管 RO 551-NESG3031M05-A

  • RoHS:

  • 制造商:

    Infineon Technologies 发射极 - 基极电压

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
NEC原装正品专卖价格
23+
SOT343
80000
专注原装正品现货特价中量大可定
询价
RENESAS/瑞萨
SOT343
7906200
询价
NECT1K
SOT-343
3000
原装长期供货!
询价
NECT1K
13+
SOT-343
3000
特价热销现货库存
询价
NEC
2018+
SOT343
6528
承若只做进口原装正品假一赔十!
询价
NECT1K
22+23+
SOT-343
17683
绝对原装正品全新进口深圳现货
询价
NEC
22+
SOT343
19777
原装正品现货
询价
RENESAS/瑞萨
19+
NA
1650
以质为本,只做原装正品
询价
NECT1K
21+
SOT-343
3000
原装现货
询价
NEC
22+
SOT343
360000
进口原装房间现货实库实数
询价
更多NESG3031M05供应商 更新时间2024-4-28 16:29:00