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NESG3031M05-T1

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

FEATURES •LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz •MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz •SiGeHBTTECHNOLOGY:

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NESG3031M05-T1

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG3031M05-T1

NPN SILICON GERMANIUM RF TRANSISTOR

CEL

California Eastern Labs

NESG3031M05-T1-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG3031M05-T1-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)

CEL

California Eastern Labs

详细参数

  • 型号:

    NESG3031M05-T1

  • 制造商:

    California Eastern Laboratories(CEL)

  • 功能描述:

    Si Small Signal Bipolar Trans

供应商型号品牌批号封装库存备注价格
NEC原装正品专卖价格
23+
SOT343
80000
专注原装正品现货特价中量大可定
询价
RENESAS
2016+
SOT343
168500
只做原装,假一罚十,公司可开17%增值税发票!
询价
RENESAS
24+
SOT343
33600
一级代理/全新现货/长期供应!
询价
Renesas(瑞萨)
23+
原厂封装
32078
10年以上分销商,原装进口件,服务型企业
询价
RENESAS/瑞萨
14+
SOT343
304
优势现货
询价
NEC
17+
SOT-343
6200
100%原装正品现货
询价
NEC
24+
SOT-343SOT-323-4
7917
新进库存/原装
询价
RENESAS
23+
SOT-343
20000
原装正品,假一罚十
询价
NEC
24+
SOT-343
5000
只做原装公司现货
询价
NEC
25+23+
SOT-343
43617
绝对原装正品现货,全新深圳原装进口现货
询价
更多NESG3031M05-T1供应商 更新时间2025-5-21 16:55:00