NESG3031M14-T3-A说明书PDF资料原装现货-114ic电子网

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NESG3031M14-T3-A	文件：317.19 Kbytes Page：12 Pages	NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,Ga=10.0dBTYP	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NESG3031M14-T3-A	文件：551.51 Kbytes Page：9 Pages	NPN SiGe HIGH FREQUENCY TRANSISTOR	CEL California Eastern Labs	CEL
NESG3031M14-T3	文件：317.19 Kbytes Page：12 Pages	NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,Ga=10.0dBTYP	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NESG3031M14-T3	文件：99.46 Kbytes Page：3 Pages	NECsNPNSiGeHIGHFREQUENCYTRANSISTOR	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC

更多NESG3031M14-T3-A供应商更新时间2025-5-21 8:31:00