NESG3031M14-T3-A说明书PDF资料原装现货-114ic电子网

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NESG3031M14-T3-A	文件：317.19 Kbytes Page：12 Pages	NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP 文件：317.19 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NESG3031M14-T3-A	文件：551.51 Kbytes Page：9 Pages	NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：551.51 Kbytes 页数：9 Pages	CEL	CEL
NESG3031M14-T3	文件：317.19 Kbytes Page：12 Pages	NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP 文件：317.19 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NESG3031M14-T3	文件：99.46 Kbytes Page：3 Pages	NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 文件：99.46 Kbytes 页数：3 Pages	NEC 瑞萨	NEC

更多NESG3031M14-T3-A供应商更新时间2025-10-7 22:58:00