首页 >NESG220034>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NESG220034 | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC 文件:97.46 Kbytes 页数:9 Pages | NEC 瑞萨 | NEC | |
NESG220034 | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC 文件:226.87 Kbytes 页数:11 Pages | RENESAS 瑞萨 | RENESAS | |
NESG220034 | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) | Renesas 瑞萨 | Renesas | |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC 文件:97.46 Kbytes 页数:9 Pages | NEC 瑞萨 | NEC | ||
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC 文件:97.46 Kbytes 页数:9 Pages | NEC 瑞萨 | NEC | ||
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC 文件:226.87 Kbytes 页数:11 Pages | RENESAS 瑞萨 | RENESAS | ||
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 22.5 dBm TYP. @ VCE = 5 V, IC 文件:97.46 Kbytes 页数:9 Pages | NEC 瑞萨 | NEC | ||
RF & Microwave device 文件:137.58 Kbytes 页数:2 Pages | RENESAS 瑞萨 | RENESAS |
详细参数
- 型号:
NESG220034
- 制造商:
RENESAS
- 制造商全称:
Renesas Technology Corp
- 功能描述:
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD(34 PKG)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
25+ |
SOT-89 |
20300 |
RENESAS/瑞萨原装特价NESG220034即刻询购立享优惠#长期有货 |
询价 | ||
RENESAS/瑞萨 |
20+ |
SOT-89 |
120000 |
原装正品 可含税交易 |
询价 | ||
RENESAS/瑞萨 |
2025+ |
SOT-89 |
5000 |
原装进口价格优 请找坤融电子! |
询价 | ||
RENESAS/瑞萨 |
22+ |
SOT-89 |
20000 |
只做原装 |
询价 | ||
NEC |
22+ |
SOT-89 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
NEC/RENESAS瑞萨 |
23+ |
SOT-89 |
89630 |
当天发货全新原装现货 |
询价 | ||
RENESAS/瑞萨 |
23+ |
SOT-23 |
27000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
RENESAS |
23+ |
NA |
19854 |
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品 |
询价 | ||
RENESAS |
24+ |
SOT-23 |
25000 |
一级专营品牌全新原装热卖 |
询价 | ||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 |
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