NESG210719-A数据表ic资料供应商报价瑞萨-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NESG210719-A	文件：124.41 Kbytes Page：10 Pages	NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr. • 3-pin ultra super minimold (19, 1608 PKG) 文件：124.41 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
NESG210719-A	文件：1.1949 Mbytes Page：9 Pages	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) 文件：1.1949 Mbytes 页数：9 Pages	CEL	CEL
NESG210719	文件：124.41 Kbytes Page：10 Pages	NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr. • 3-pin ultra super minimold (19, 1608 PKG) 文件：124.41 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
NESG210719	文件：1.1949 Mbytes Page：9 Pages	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) 文件：1.1949 Mbytes 页数：9 Pages	CEL	CEL
NESG210719	文件：114.56 Kbytes Page：3 Pages	NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SiGe TRANSISTOR • 3-PIN SUPER MINIMOLD (19) PACKAGE 文件：114.56 Kbytes 页数：3 Pages	NEC 瑞萨	NEC

更多NESG210719-A供应商更新时间2025-10-5 14:26:00