NESG210719-T1资料datasheet下载行情报价-114ic电子网

零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
NESG210719-T1	文件：114.56 Kbytes Page：3 Pages	NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES •IDEALFOROSC.,HIGH-GAINAMPLIFICATION APPLICATIONS •HIGHBREAKDOWNVOLTAGETECHNOLOGYFOR SiGeTRANSISTOR •3-PINSUPERMINIMOLD(19)PACKAGE	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NESG210719-T1	文件：124.41 Kbytes Page：10 Pages	NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG)	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NESG210719-T1	文件：1.1949 Mbytes Page：9 Pages	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)	CEL California Eastern Labs	CEL
NESG210719-T1-A	文件：124.41 Kbytes Page：10 Pages	NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG)	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NESG210719-T1-A	文件：1.1949 Mbytes Page：9 Pages	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)	CEL California Eastern Labs	CEL

更多NESG210719-T1供应商更新时间2025-5-23 10:16:00