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型号	下载订购	功能描述	制造商上传企业	LOGO
NESG2107M33	文件：213.31 Kbytes Page：8 Pages	NPN SILICON SiGe RF TWIN TRANSISTOR NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5435, NESG2107M33) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in l 文件：213.31 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
NESG2107M33	文件：213.31 Kbytes Page：8 Pages	NPN SILICON SiGe RF TWIN TRANSISTOR NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5436, NESG2107M33) Q1: High gain transistor fT = 12 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Built-in lo 文件：213.31 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
NESG2107M33	文件：244.19 Kbytes Page：11 Pages	NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted • 3-pin super lead-less minimold (M33, 0804 PKG) packa 文件：244.19 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NESG2107M33	文件：302.97 Kbytes Page：4 Pages	NECs NPN SILICON TRANSISTOR 文件：302.97 Kbytes 页数：4 Pages	CEL	CEL
NESG2107M33	文件：300 bytes Page：1 Pages	NECs NPN SILICON TRANSISTOR	CEL	CEL
NESG2107M33-A	文件：244.19 Kbytes Page：11 Pages	NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted • 3-pin super lead-less minimold (M33, 0804 PKG) packa 文件：244.19 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NESG2107M33-T3	文件：244.19 Kbytes Page：11 Pages	NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted • 3-pin super lead-less minimold (M33, 0804 PKG) packa 文件：244.19 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NESG2107M33-T3-A	文件：244.19 Kbytes Page：11 Pages	NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted • 3-pin super lead-less minimold (M33, 0804 PKG) packa 文件：244.19 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NESG2107M33-A	文件：302.97 Kbytes Page：4 Pages	NECs NPN SILICON TRANSISTOR 文件：302.97 Kbytes 页数：4 Pages	CEL	CEL
NESG2107M33-T3-A	文件：302.97 Kbytes Page：4 Pages	NECs NPN SILICON TRANSISTOR 文件：302.97 Kbytes 页数：4 Pages	CEL	CEL

详细参数

型号：
NESG2107M33
制造商：
CEL
制造商全称：
CEL
功能描述：
NECs NPN SILICON TRANSISTOR

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宇创芯科技有限公司	NESG2107M33	NEC	24+	SOT-23	9600	原装现货,优势供应,支持实单!	询价
深圳市润联芯城科技有限公司	NESG2107M33	NEC	23+	SOT-23	50000	原装正品支持实单	询价
深圳市弘为电子有限公司	NESG2107M33-T3-A	NECELECTRON	24+	原封装	18514	原装现货假一罚十	询价
千层芯半导体(深圳)有限公司	NESG2107M33-A	CEL	24+	原厂原装	5000	原装正品	询价
深圳市华来深电子有限公司	NESG2107M33-T3	NEC	23+	SOT723	8560	受权代理!全新原装现货特价热卖!	询价
深圳市澳亿芯电子科技有限公司	NESG2107M33-T3	NEC	06+	SOT23	30000	旗舰店	询价
艾睿（深圳）半导体有限公司	NESG2107M33-T3	NEC	2447	SOT23	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市威尔健半导体有限公司	NESG2107M33-T3-A	NEC	23+	M33	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	NESG2107M33-T3-A	NEC	21+	SOT723	10000	原装现货假一罚十	询价
深圳市英瑞尔电子科技有限公司	NESG2107M33-T3	NEC	24+	SOT923-3	2600	原装现货假一赔十	询价

更多NESG2107M33供应商更新时间2025-12-2 13:28:00

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