NESG240033资料datasheet下载行情报价瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NESG240033	文件：103.04 Kbytes Page：8 Pages	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) = 文件：103.04 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
NESG240033	文件：232.13 Kbytes Page：10 Pages	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) = 文件：232.13 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
NESG240033	文件：300 bytes Page：1 Pages	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)	Renesas 瑞萨	Renesas
NESG240033-A	文件：103.04 Kbytes Page：8 Pages	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) = 文件：103.04 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
NESG240033-T1B	文件：103.04 Kbytes Page：8 Pages	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) = 文件：103.04 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
NESG240033-T1B	文件：232.13 Kbytes Page：10 Pages	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) = 文件：232.13 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
NESG240033-T1B-A	文件：103.04 Kbytes Page：8 Pages	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) = 文件：103.04 Kbytes 页数：8 Pages	NEC 瑞萨	NEC

详细参数

型号：
NESG240033
制造商：
RENESAS
制造商全称：
Renesas Technology Corp
功能描述：
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD(33 PKG)

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	NESG240033	RENESAS/瑞萨	20+	SOT-23	120000	原装正品可含税交易	询价
深圳市坤融电子科技有限公司	NESG240033	RENESAS/瑞萨	2025+	SOT-23	5000	原装进口价格优请找坤融电子!	询价
深圳市创新迹电子有限公司	NESG240033	RENESAS/瑞萨	22+	SOT-23	20000	只做原装	询价
深圳市正迈科技有限公司	NESG240033-T1B	RENESAS	23+	NA	19854	专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品	询价
千层芯半导体(深圳)有限公司	NESG240033-T1B	RENESAS	24+	SOT-23	25000	一级专营品牌全新原装热卖	询价
深圳市振宏微科技有限公司	NESG240033-T1B	SOT-23	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
中天科工半导体（深圳）有限公司	NESG240033-T1B-A	NEC	20+	SOT23	49000	原装优势主营型号-可开原型号增税票	询价
深圳市威尔健半导体有限公司	NESG240033-TB	RENESAS/瑞萨	23+	SOT323	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	NESG240033-TB	RENESAS/瑞萨	25+	SOT323	10000	原装现货假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	NESG240033-TB	RENESAS/瑞萨	23+	SOT323	27000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价

更多NESG240033供应商更新时间2026-1-30 14:00:00

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