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NESG240033

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) =

文件:103.04 Kbytes 页数:8 Pages

NEC

瑞萨

NESG240033

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) =

文件:232.13 Kbytes 页数:10 Pages

RENESAS

瑞萨

NESG240033

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

Renesas

瑞萨

NESG240033-A

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) =

文件:103.04 Kbytes 页数:8 Pages

NEC

瑞萨

NESG240033-T1B

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) =

文件:103.04 Kbytes 页数:8 Pages

NEC

瑞萨

NESG240033-T1B

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) =

文件:232.13 Kbytes 页数:10 Pages

RENESAS

瑞萨

NESG240033-T1B-A

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) =

文件:103.04 Kbytes 页数:8 Pages

NEC

瑞萨

详细参数

  • 型号:

    NESG240033

  • 制造商:

    RENESAS

  • 制造商全称:

    Renesas Technology Corp

  • 功能描述:

    NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD(33 PKG)

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
20+
SOT-23
120000
原装正品 可含税交易
询价
RENESAS/瑞萨
2025+
SOT-23
5000
原装进口价格优 请找坤融电子!
询价
RENESAS
23+
NA
19854
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
询价
RENESAS
24+
SOT-23
25000
一级专营品牌全新原装热卖
询价
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
NEC
20+
SOT23
49000
原装优势主营型号-可开原型号增税票
询价
RENESAS/瑞萨
23+
SOT323
50000
全新原装正品现货,支持订货
询价
RENESAS/瑞萨
21+
SOT323
10000
原装现货假一罚十
询价
RENESAS/瑞萨
23+
SOT323
27000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
RENESAS/瑞萨
11+
SOT-23
455
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多NESG240033供应商 更新时间2025-12-14 14:00:00