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NESG220033

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,lowdistortionamplification. NF=0.75dBTYP.@VCE=5V,IC=10mA,f=1GHz •PO(1dB)=21.5dBmTYP.@VCE=5V,IC(set)=

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG220033

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,lowdistortionamplification. NF=0.75dBTYP.@VCE=5V,IC=10mA,f=1GHz •PO(1dB)=21.5dBmTYP.@VCE=5V,IC(set)=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG220033-A

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,lowdistortionamplification. NF=0.75dBTYP.@VCE=5V,IC=10mA,f=1GHz •PO(1dB)=21.5dBmTYP.@VCE=5V,IC(set)=

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG220033-T1B

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,lowdistortionamplification. NF=0.75dBTYP.@VCE=5V,IC=10mA,f=1GHz •PO(1dB)=21.5dBmTYP.@VCE=5V,IC(set)=

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG220033-T1B

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,lowdistortionamplification. NF=0.75dBTYP.@VCE=5V,IC=10mA,f=1GHz •PO(1dB)=21.5dBmTYP.@VCE=5V,IC(set)=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG220033-T1B-A

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,lowdistortionamplification. NF=0.75dBTYP.@VCE=5V,IC=10mA,f=1GHz •PO(1dB)=21.5dBmTYP.@VCE=5V,IC(set)=

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

XE220033

SPARKQUENCHER

OKAYAOKAYA ELECTRIC INDUSTRIES CO., LTD.

冈谷电机工业株式会社

XE220033

SPARKQUENCHER

OKAYAOKAYA ELECTRIC INDUSTRIES CO., LTD.

冈谷电机工业株式会社

XEB220033

SPARKQUENCHER

OKAYAOKAYA ELECTRIC INDUSTRIES CO., LTD.

冈谷电机工业株式会社

XEB220033

SPARKQUENCHER

SPARKQUENCHER Features Ratedvoltage250VAC,compactsize Applications Suppressingnoiseoccuringworldwide AutomaticmachinesandOfficeappliances.

OKAYAOKAYA ELECTRIC INDUSTRIES CO., LTD.

冈谷电机工业株式会社

详细参数

  • 型号:

    NESG220033

  • 制造商:

    RENESAS

  • 制造商全称:

    Renesas Technology Corp

  • 功能描述:

    NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD(33 PKG)

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
SOT23
7906200
询价
RENESAS
24+
SOT-23
5000
只做原装公司现货
询价
23+
N/A
85400
正品授权货源可靠
询价
RENESAS/瑞萨
SOT-23
90000
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
RENESAS-瑞萨
24+25+/26+27+
SOT-23.贴片
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
RENESAS/瑞萨
23+
SOT-23
54258
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
一级代理
22+
N/A
46100
一级代理放心采购
询价
NEC
2017+
SOT23
38896
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
RENESAS
23+
SC-59
45000
原装正品现货
询价
RENESAS/瑞萨
1948+
SOT23-3
6852
只做原装正品现货!或订货假一赔十!
询价
更多NESG220033供应商 更新时间2024-5-25 17:06:00