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NESG240034

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set

文件:91.91 Kbytes 页数:9 Pages

NEC

瑞萨

NESG240034

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set

文件:221.09 Kbytes 页数:11 Pages

RENESAS

瑞萨

NESG240034

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

Renesas

瑞萨

NESG240034-A

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set

文件:91.91 Kbytes 页数:9 Pages

NEC

瑞萨

NESG240034-T1

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set

文件:91.91 Kbytes 页数:9 Pages

NEC

瑞萨

NESG240034-T1

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set

文件:221.09 Kbytes 页数:11 Pages

RENESAS

瑞萨

NESG240034-T1-A

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set

文件:91.91 Kbytes 页数:9 Pages

NEC

瑞萨

NESG240034-A

RF & Microwave device

文件:137.58 Kbytes 页数:2 Pages

RENESAS

瑞萨

详细参数

  • 型号:

    NESG240034

  • 制造商:

    RENESAS

  • 制造商全称:

    Renesas Technology Corp

  • 功能描述:

    NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD(34 PKG)

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
25+
SOT-89
20300
RENESAS/瑞萨原装特价NESG240034即刻询购立享优惠#长期有货
询价
NEC/RENES
SOT-89
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
RENESAS/瑞萨
20+
SOT-89
120000
原装正品 可含税交易
询价
RENESAS/瑞萨
2025+
SOT-89
5000
原装进口价格优 请找坤融电子!
询价
NEC
22+
SOT-89
100000
代理渠道/只做原装/可含税
询价
NEC/RENESAS瑞萨
23+
SOT-89
89630
当天发货全新原装现货
询价
RENESAS/瑞萨
24+
SOT89
63000
只做全新原装进口现货
询价
RENESAS/瑞萨
2450+
SOT89
8850
只做原装正品假一赔十为客户做到零风险!!
询价
NEC
25+
SOT-89
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
KEXIN/科信
23+
SMD DIP
27000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多NESG240034供应商 更新时间2025-12-11 20:39:00