首页 >NESG240034>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NESG240034 | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set 文件：91.91 Kbytes 页数：9 Pages | NEC 瑞萨 | NEC | |
NESG240034 | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set 文件：221.09 Kbytes 页数：11 Pages | RENESAS 瑞萨 | RENESAS | |
NESG240034 | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) | Renesas 瑞萨 | Renesas | |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set 文件：91.91 Kbytes 页数：9 Pages | NEC 瑞萨 | NEC | ||
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set 文件：91.91 Kbytes 页数：9 Pages | NEC 瑞萨 | NEC | ||
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set 文件：221.09 Kbytes 页数：11 Pages | RENESAS 瑞萨 | RENESAS | ||
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set 文件：91.91 Kbytes 页数：9 Pages | NEC 瑞萨 | NEC | ||
RF & Microwave device 文件：137.58 Kbytes 页数：2 Pages | RENESAS 瑞萨 | RENESAS |
详细参数
- 型号：
NESG240034
- 制造商：
RENESAS
- 制造商全称：
Renesas Technology Corp
- 功能描述：
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD(34 PKG)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
25+ |
SOT-89 |
20300 |
RENESAS/瑞萨原装特价NESG240034即刻询购立享优惠#长期有货 |
询价 | ||
NEC/RENES |
SOT-89 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
RENESAS/瑞萨 |
20+ |
SOT-89 |
120000 |
原装正品 可含税交易 |
询价 | ||
RENESAS/瑞萨 |
2025+ |
SOT-89 |
5000 |
原装进口价格优 请找坤融电子! |
询价 | ||
RENESAS/瑞萨 |
22+ |
SOT-89 |
20000 |
只做原装 |
询价 | ||
NEC |
22+ |
SOT-89 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
NEC/RENESAS瑞萨 |
23+ |
SOT-89 |
89630 |
当天发货全新原装现货 |
询价 | ||
RENESAS/瑞萨 |
24+ |
SOT89 |
63000 |
只做全新原装进口现货 |
询价 | ||
RENESAS/瑞萨 |
2450+ |
SOT89 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
NEC |
25+ |
SOT-89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 |
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