NESG240034-T1-A中文资料瑞萨数据手册PDF规格书

厂商型号	NESG240034-T1-A
功能描述	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
文件大小	91.91 Kbytes
页面数量	9 页
生产厂商	Renesas Electronics America
企业简称	NEC【瑞萨】
中文名称	日本瑞萨电子株式会社官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-21 20:00:00
人工找货	NESG240034-T1-A价格和库存，欢迎联系客服免费人工找货

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

FEATURES

• The device is an ideal choice for low noise, low distortion amplification.

NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz

• PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz

• OIP3 = 35.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz

• Maximum stable power gain: MSG =11.5 dB TYP. @ VCE = 5 V, IC = 40 mA, f = 1 GHz

• SiGe HBT technology (UHS2) : fT = 10.0 GHz

• This product is improvement of ESD of NESG2xxx series.

• 3-pin power minimold (34 PKG)

型号：
NESG240034-T1-A
制造商：
NEC
制造商全称：
NEC
功能描述：
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD(34 PKG)