丝印：FDB031N08；Package：D2-PAK；N-Channel PowerTrench® MOSFET 75 V, 235 A, 3.1 mΩ

Features • RDS(on) = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild S

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ONSEMI

安森美半导体

丝印：FDB031N08；Package：D2-PAK；N-Channel PowerTrench® MOSFET 75 V, 235 A, 3.1 mΩ

Features • RDS(on) = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild S

文件：669.94 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 75V, 235A, 3.1m廓

Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • RDS(on) = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast switc

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 235A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.1mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电