丝印：FDB075N15A；Package：D2-PAK；Channel Power Trench® MOSFET150V 110A, 7.5mΩ

Features -Typ rDS(on) = 5.5mΩ at VGS = 10V, ID = 80A -Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A -UIS Capability -RoHS Compliant -Qualified to AEC Q101 Applications - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Integrated Starter/alternator - Primar

文件：538.71 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FDB075N15A；Package：D2-PAK；Channel Power Trench® MOSFET150V 110A, 7.5mΩ

Features -Typ rDS(on) = 5.5mΩ at VGS = 10V, ID = 80A -Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A -UIS Capability -RoHS Compliant -Qualified to AEC Q101 Applications - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Integrated Starter/alternator - Primar

文件：538.71 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：339.92 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench짰 MOSFET

文件：311.35 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel Power Trench짰 MOSFET

文件：368.29 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体