N-channel 500 V, 0.170 Ohm typ., 14 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested\n• Low input capacitance and gate charge• Low gate input resistance;

ST

意法半导体

N-channel 500 V, 0.170 typ., 14 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package

文件：659.41 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 500 V, 0.162 廓, 17 A TO-220, TO-220FP, TO-247, D짼PAK MDmesh??II Power MOSFET

文件：867.83 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：320.37 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：398.27 Kbytes 页数：2 Pages

ISC

无锡固电