STL9P2UH7

P-channel 20 V, 0.0195 ??typ., 9 A STripFET??H7 Power MOSFET in a PowerFLAT??3.3x3.3 package

Description ThisP-channelPowerMOSFETutilizesthe STripFETH7technologywithatrenchgate structurecombinedwithextremelylowonresistance.Thedevicealsooffersultra-low capacitancesforhigherswitchingfrequency operations. Features Verylowon-resistance Verylowcapacit

STL9P2UH7

P-channel 20 V, 0.0195 Ohm typ., 9 A STripFET H7 Power MOSFET in a PowerFLAT 3.3x3.3 package

This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low on-resistance. The device also offers ultra-low capacitances for higher switching frequency operations.\n; Very low on-resistance\nVery low capacitance and gate charge\nHigh avalanche ruggedness\n;

STS9P2UH7

Verylowcapacitanceandgatecharge

STLD40DPUR

STM
QFN8

STLD40DPUR

ST
QFN8

ST