STL60P4LLF6

丝印：60P4LLF6；Package：PowerFLA；P-channel 40 V, 0.0115 廓 typ.,60 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package

Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET™F6technology withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages. Features Verylowon-resistance Verylowgatecharge Highavalancheruggedness 

STL60P4LLF6

P沟道-40 V、0.0115 Ohm典型值、-60 A STripFET F6功率MOSFET，PowerFLAT 5x6封装; • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.\n\n