STL90N10F7

Package：PowerFLAT；N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFETF7technologywithanenhanced trench

STL90N10F7

N沟道100 V、0.007 Ohm典型值、70 A STripFET F7功率MOSFET，PowerFLAT 5x6封装; • 市场上最低的RDS(on) \n• 出色的品质因数（FoM） \n• 低Crss/Ciss比，抗EMI \n• 坚固的抗雪崩能力;

该N沟道功率MOSFET利用STripFET F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。\n\n

STL90N10F7

Marking：90N10F7；Package：PowerFLAT；N-channel 100 V, 0.007 廓 typ., 70 A STripFET??F7 Power MOSFET in a PowerFLAT??5x6 package

STL90N10F7_V01

N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFETF7technologywithanenhanced trench

90N10F7

N-channel100V,0.007廓typ.,70ASTripFET??F7PowerMOSFETinaPowerFLAT??5x6package