丝印：90N10F7；Package：PowerFLAT；N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：842.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

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丝印：90N10F7；Package：PowerFLAT；N-channel 100 V, 0.007 廓 typ., 70 A STripFET??F7 Power MOSFET in a PowerFLAT??5x6 package

文件：482.03 Kbytes 页数：14 Pages

STMICROELECTRONICS

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N沟道100 V、0.007 Ohm典型值、70 A STripFET F7功率MOSFET，PowerFLAT 5x6封装

该N沟道功率MOSFET利用STripFET F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。 • 市场上最低的RDS(on) \n• 出色的品质因数（FoM） \n• 低Crss/Ciss比，抗EMI \n• 坚固的抗雪崩能力;

ST

意法半导体

N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：842.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体