N沟道650 V、0.09 Ohm典型值、22.5 A MDmesh M5功率MOSFET，PowerFLAT 8x8 HV封装

This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and super • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

Low input capacitance and gate charge

文件：1.10742 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.073, 30 A MDmesh V Power MOSFET

文件：1.58846 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：320.01 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：436.26 Kbytes 页数：2 Pages

ISC

无锡固电