Dual N-channel 30 V, 0.0059 Ohm typ., 19 A STripFET H5 Power MOSFET in , PowerFLAT 5x6 double island package

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.\n • RDS(on)* Qgindustry benchmark\n• Extremely low on-resistance RDS(on)\n• Very low switching gate charge• High avalanche ruggedness\n• Low gate drive power losses;

ST

意法半导体

Dual N-channel 30 V, 0.0059 , 19 A PowerFLAT(5x6) double island, STripFET V Power MOSFET

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STMICROELECTRONICS

意法半导体

PowerFLAT-5x5-12

ST

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DFN5X6

ST/意法

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QFN8

ST

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