汽车级N沟道30 V、4.5 mOhm典型值、80 A STripFET H5功率MOSFET，PowerFLAT 5x6封装

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. • AEC-Q101 qualified \n• Low on-resistance RDS(on) \n• High avalanche ruggedness \n• Low gate drive power loss \n• Wettable flank package;

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意法半导体

丝印：66N3LLH5；Package：PowerFLAT；Automotive-grade dual N-channel 30 V, 4.5 m廓 typ., 80 A STripFET??H5 Power MOSFET in a PowerFLAT??5x6 package

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STMICROELECTRONICS

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PowerFLAT-5x5-12

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DFN5X6

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QFN8

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