STL90N3LLH6

Package：PowerFLAT；N-channel 30 V, 0.0038 廓 typ., 24 A STripFET??VI DeepGATE?? Power MOSFET in PowerFLAT??5x6 package

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthe6thgenerationofSTripFET™DeepGATE™technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. Features •RDS(on)*Qgindustrybenchmark •Extremelylowon-resistance

STL90N3LLH6

N沟道30 V、0.004 Ohm典型值、90 A STripFET H6功率MOSFET，PowerFLAT 5x6封装; • RDS(on)* Qgindustry benchmark \n• Extremely low on-resistance RDS(on) \n• High avalanche ruggedness \n• Low gate drive power losses \n• Very low switching gate charge;

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.\n\n