N-channel 30 V, 0.021 typ., 6 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT

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STMICROELECTRONICS

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Flight controller unit evaluation board for toy drones

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N沟道30 V、0.021 Ohm典型值、6 A STripFET H6功率MOSFET，PowerFLAT 2x2封装

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

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Low gate drive power losses

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STMICROELECTRONICS

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