N沟道30 V、0.021 Ohm、6 A STripFET(TM) VI DeepGATE(TM) 功率MOSFET，SOT23-6L封装

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages. • RDS(on)* Qgindustry benchmark \n• Extremely low on-resistance RDS(on) \n• High avalanche ruggedness \n• Low gate drive power losses;

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Low gate drive power losses

文件：1.06076 Mbytes 页数：12 Pages

STMICROELECTRONICS

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Flight controller unit evaluation board for toy drones

文件：1.90521 Mbytes 页数：6 Pages

STMICROELECTRONICS

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N-channel 30 V, 0.021 typ., 6 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT

文件：1.08354 Mbytes 页数：14 Pages

STMICROELECTRONICS

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