650V N-Channel MOSFET

These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary , planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in • 12A,650V,RDS(on)=0.8W@VGS=10V\r\n• Low gate charge\r\n• Low Crss\r\n• Fast switching\r\n• Improved dv/dt capability;

Silan

士兰微

N-Channel 650V (D-S) Power MOSFET

文件：1.10862 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

12A, 650V N-CHANNEL MOSFET

文件：403.25 Kbytes 页数：10 Pages

SILAN

士兰微

N-Channel MOSFET uses advanced trench technology

文件：1.30873 Mbytes 页数：5 Pages

DOINGTER

杜因特