Ultra low gate charge

Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficie

文件：956.08 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N沟道800 V、0.95 Ohm典型值、3.6 A MDmesh K5功率MOSFET，PowerFLAT 5x6 VHV封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

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Zener-protected

Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for app

文件：1.00919 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

Zener-protected

Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for app

文件：1.00919 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体