STP7N80K5说明书PDF资料供应价格意法半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
STP7N80K5	文件：1.00919 Mbytes Page：21 Pages	Zener-protected Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for app 文件：1.00919 Mbytes 页数：21 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STP7N80K5	文件：300 bytes Page：1 Pages	N沟道800 V、0.95 Ohm典型值、6 A MDmesh K5功率MOSFET，TO-220封装 This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;	ST 意法半导体	ST
STU7N80K5	文件：1.00919 Mbytes Page：21 Pages	Zener-protected Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for app 文件：1.00919 Mbytes 页数：21 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STD7N80K5	文件：1.00919 Mbytes Page：21 Pages	Zener-protected Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for app 文件：1.00919 Mbytes 页数：21 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STD7N80K5	文件：335.38 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor 文件：335.38 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
STF7N80K5	文件：689.13 Kbytes Page：14 Pages	Ultra low gate charge Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi 文件：689.13 Kbytes 页数：14 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

技术参数

Package：
TO-220AB
Grade：
Industrial
VDSS(V)：
800
RDS(on)_max(@ VGS=10V)(Ω)：
1.2
Drain Current (Dc)_max(A)：
6
PTOT_max(W)：
110
Qg_typ(nC)：
13.4

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	STP7N80K5	ST/意法	25+	TO-220	32360	ST/意法全新特价STP7N80K5即刻询购立享优惠#长期有货	询价
深圳市赛芯源科技有限公司	STP7N80K5	ST原装正品现货	2020+	TO-220	37500	原装正品现货,诚信经营。	询价
深圳市华高宇电子有限公司	STP7N80K5	STM	19+		750	TO-220-3	询价
深圳市品优时代科技有限公司	STP7N80K5	ST	2019	T0-220	19700	INFINEON品牌专业原装优质	询价
深圳市高捷芯城科技有限公司	STP7N80K5	ST(意法半导体)	24+	TO-220	7828	支持大陆交货,美金交易。原装现货库存。	询价
深圳市达恩科技有限公司	STP7N80K5	STMicroelectronics	24+	NA	3000	进口原装正品优势供应	询价
深圳市华斯顿科技有限公司	STP7N80K5	ST	25+23+	TO-220F	19175	绝对原装正品全新进口深圳现货	询价
深圳市百诺芯科技有限公司	STP7N80K5	ST/意法	23+	NA	12730	原装正品代理渠道价格优势	询价
艾睿（深圳）半导体有限公司	STP7N80K5	ST(意法半导体)	2447	TO-220	105000	50个/管一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市科雨电子有限公司	STP7N80K5	STM	25+	TO-220	1675	就找我吧!--邀您体验愉快问购元件!	询价

更多STP7N80K5供应商更新时间2025-10-4 14:14:00

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