Zener-protected

Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for app

文件：1.00919 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：335.38 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道800 V、0.95 Ohm典型值、6 A MDmesh K5功率MOSFET，DPAK封装

这款超高压N-沟道功率MOSFET采用MDmesh™ K5技术进行设计。该技术以创新的专有垂直结构为基础。因此，在要求高功率密度和高效率的应用中，导通电阻显著降低，并具有极低的栅极电荷。 • 业界先进的低RDS(on) x 面积 \n• 业界出色的品质因数 (FoM) \n• 超低的栅极电荷 \n• 经过100%雪崩测试 \n• 稳压保护;

ST

意法半导体

Ultra low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：689.13 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) -RDS(on) = 1.2Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.31 Kbytes 页数：2 Pages

ISC

无锡固电

Ultra low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：689.13 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体