STF33N60DM6

N-channel 600 V, 115 m typ., 25 A, MDmesh DM6 Power MOSFET in a TO‑220FP package

Features •Fast-recoverybodydiode •LowerRDS(on)perareavspreviousgeneration •Lowgatecharge,inputcapacitanceandresistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

STF33N60DM6

N沟道600 V、115 mOhm典型值、25 A MDmesh DM6功率MOSFET，TO-220FP封装; • Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.\n\n

STB33N60DM6

N-channel600V,115mΩtyp.,25A,MDmeshDM6PowerMOSFETinaD2PAKpackage

Features •Fast-recoverybodydiode •LowerRDS(on)perareavspreviousgeneration •Lowgatecharge,inputcapacitanceandresistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Applications •Switchingapplications Description Thishigh-voltageN-cha

STL33N60DM6

N-channel600V,125mtyp.,21A,MDmeshDM6PowerMOSFETinaPowerFLAT8x8HVpackage

Features •Fast-recoverybodydiode •LowerRDS(on)perareavspreviousgeneration •Lowgatecharge,inputcapacitanceandresistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

STP33N60DM6

N-channel600V,115mtyp.,25A,MDmesh™DM6PowerMOSFETinaTO‑220package

Features •Fast-recoverybodydiode •LowerRDS(on)perareavspreviousgeneration •Lowgatecharge,inputcapacitanceandresistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected •High-creepagepackage Description Thishigh-voltageN-channelPowerMOSFET