丝印：24N60M2；Package：PowerFLAT；N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV package

Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency co

文件：1.27622 Mbytes 页数：16 Pages

STMICROELECTRONICS

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N沟道600 V、0.186 Ohm典型值、18 A MDmesh M2功率MOSFET，PowerFLAT 8x8 HV封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener protected;

ST

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N-channel 600 V, 0.168 廓 typ., 18 A MDmesh II Plus??low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages

文件：1.5738 Mbytes 页数：22 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK

文件：1.5738 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK

文件：1.5738 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体