N沟道600 V、0.168 Ohm典型值、18 A MDmesh M2功率MOSFET，TO-247封装

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefor • Extremely low gate charge \n• Lower RDS(on)x area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK

文件：1.5738 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650-V (D-S) Super Junction MOSFET

文件：1.15453 Mbytes 页数：11 Pages

VBSEMI

微碧半导体

N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK

文件：1.5738 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in TO-220FP and I2PAKFP packages

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

文件：1.08688 Mbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体